2SB301

SKU: 2SB301

2SB301 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	35
Max. hFE	200
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	330u
Polarity	PNP
Derate Above 25°C	735m
Oper. Temp (°C) Max.	75
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	75 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584648

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