The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB302

2SB302

SKU: 2SB302
2SB302 Transistor Germanium PNP CASE: TO1 MAKE: Hitachi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Hitachi
Vbr CBO 10
Max. PD (W) 40m
C(ob) (F) 10p
hfe 80
Ic Max. (A) 2.0m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity PNP
Trans. Freq (Hz) Min. 12.M
@VCE (test) (V) 6.0i
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.04 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.002 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 542439
Back