2SB306

SKU: 2SB306

2SB306 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	105
Max. PD (W)	75m
hfe	50
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	.90M
@VCE (test) (V)	.35
Oper. Temp (°C) Max.	75
@Ic (A)	2.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	105 V
Maximum Emitter-Base Voltage \|Veb\|	50 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	584649

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