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2SB309A
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2SB309A

SKU: 2SB309A
2SB309A Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB309
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 75
Max. PD (W) 43
Max. hFE 125
Min hFE 30
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 220u
Polarity PNP
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 17k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 43 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 550335
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