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2SB310
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2SB310

SKU: 2SB310
2SB310 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 140
Max. PD (W) 43
Max. hFE 125
Min hFE 30
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 220u
Polarity PNP
R(sat) (Û) 110m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 17k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 43 W
Maximum Collector-Base Voltage |Vcb| 140 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 549773
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