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2SB312
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2SB312

SKU: 2SB312
2SB312 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 140
Max. PD (W) 43
Max. hFE 100
Min hFE 14
Ic Max. (A) 8.0
@Ic (test) (A) 8.0
Icbo Max. @Vcb Max. (A) 220u
Polarity PNP
R(sat) (Û) 110m
Derate Above 25°C 666m
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 140 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 549775
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