2SB313

SKU: 2SB313

2SB313 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	180
Max. PD (W)	43
Max. hFE	100
Min hFE	14
Ic Max. (A)	10
@Ic (test) (A)	8.0
Icbo Max. @Vcb Max. (A)	220u
Polarity	PNP
R(sat) (Û)	110m
Derate Above 25°C	666m
Oper. Temp (°C) Max.	100
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.7 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	549776

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