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2SB315
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2SB315

SKU: 2SB315
2SB315 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Mitsubishi
Vbr CBO 16
Vbr CEO 16
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.5m
hfe 50
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 551981
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