2SB316

SKU: 2SB316

2SB316 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Mitsubishi
Vbr CBO	16
Vbr CEO	16
Max. PD (W)	150m
Derate (Amb) (W/°C)	2.5m
hfe	60
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	14u
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	100
@Ic (A)	150m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	16 V
Maximum Collector-Emitter Voltage \|Vce\|	16 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	551982

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