The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB317
View detailed images (1)

2SB317

SKU: 2SB317
2SB317 Transistor Germanium PNP CASE: TO7 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO7
Manufacturer Mitsubishi
Vbr CBO 16
Vbr CEO 16
Max. PD (W) 250m
Derate (Amb) (W/°C) 4.2m
hfe 60
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 767266
Back