2SB321

SKU: 2SB321

2SB321 Transistor Germanium PNP CASE: SOT19 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	SOT19
Manufacturer	Toshiba
Vbr CBO	12
Max. PD (W)	40m
C(ob) (F)	12p
Derate (Amb) (W/°C)	769u
hfe	100
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	4.0u
Polarity	PNP
Trans. Freq (Hz) Min.	6.0M
@VCE (test) (V)	1.5i
Oper. Temp (°C) Max.	75
@Ic (A)	500u
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.04 W
Maximum Collector-Base Voltage \|Vcb\|	12 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	65 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	584650

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