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2SB322
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2SB322

SKU: 2SB322
2SB322 Transistor Germanium PNP CASE: SOT19 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case SOT19
Manufacturer Toshiba
Vbr CBO 12
Max. PD (W) 40m
C(ob) (F) 12p
Derate (Amb) (W/°C) 769u
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 4.0u
Polarity PNP
Trans. Freq (Hz) Min. 6.0M
@VCE (test) (V) 1.5
Oper. Temp (°C) Max. 75
@Ic (A) 500u
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.04 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 65 °C
Forward Current Transfer Ratio (hFE), MIN 150
SKU 584651
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