2SB325

SKU: 2SB325

2SB325 Transistor Germanium PNP CASE: R57 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	R57
Manufacturer	Fujitsu
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	1.8
Max. hFE	250
Min hFE	20
Ic Max. (A)	600m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Derate Above 25°C	30m
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.8 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	50 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	767265

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