2SB335
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2SB335

SKU: 2SB335
2SB335 Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 20
Max. PD (W) 83m
Derate (Amb) (W/°C) 1.6m
hfe 70
Ic Max. (A) 60m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.083 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.06 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 767258
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