2SB338H
View detailed images (13)

2SB338H

SKU: 2SB338H
2SB338H Transistor Germanium PNP CASE: TO3 MAKE: Hitachi
Product specifications
Equivalent 2SB338
Type Transistor Germanium PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 12
Min hFE 50-
Ic Max. (A) 7.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
R(sat) (Û) 40m-
Derate Above 25°C 185m
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.125 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 767256
Back