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2SB339
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2SB339

SKU: 2SB339
2SB339 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi
Product specifications
Equivalent 2SB339H
Type Transistor Germanium PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 80
Vbr CEO 35
Max. PD (W) 12
Min hFE 35-
Ic Max. (A) 10
@Ic (test) (A) 8.0
Icbo Max. @Vcb Max. (A) 250u
Polarity PNP
R(sat) (Û) 70m-
Derate Above 25°C 185m
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 50 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.125 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 542441
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