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2SB346
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2SB346

SKU: 2SB346
2SB346 Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 32
Max. PD (W) 165m
Derate (Amb) (W/°C) 3.3m
hfe 220
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 17k
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 75
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.165 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 220
SKU 549777
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