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2SB350
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2SB350

SKU: 2SB350
2SB350 Transistor Germanium PNP CASE: TO1 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Sanyo Semiconductor
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 150m
hfe 100
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
@VCE (test) (V) 1.5
@Ic (A) 30m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 75 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 571252
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