The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB356
View detailed images (13)

2SB356

SKU: 2SB356
2SB356 Transistor Germanium PNP CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Mitsubishi
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 15
Max. hFE 120-
Min hFE 25-
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Derate Above 25°C 250m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 25
SKU 767241
Back