2SB357

SKU: 2SB357

2SB357 Transistor Germanium PNP CASE: TO3 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Mitsubishi
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	15
Max. hFE	120-
Min hFE	20-
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Derate Above 25°C	250m
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	767240

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