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2SB359
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2SB359

SKU: 2SB359
2SB359 Transistor Germanium PNP CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Mitsubishi
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 50
Max. hFE 100-
Min hFE 10
Ic Max. (A) 10
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Derate Above 25°C 833m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 551984
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