| Type | Transistor Germanium PNP | |
| Case | TO1 | |
| Manufacturer | Toshiba | |
| Vbr CBO | 20 | |
| Vbr CEO | 20 | |
| Max. PD (W) | 150m | |
| C(ob) (F) | 50p | |
| Derate (Amb) (W/°C) | 3.0m | |
| hfe | 90 | |
| Ic Max. (A) | 400m | |
| Icbo Max. @Vcb Max. (A) | 14n | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 1.0M | |
| @VCE (test) (V) | .50 | |
| Oper. Temp (°C) Max. | 75 | |
| @Ic (A) | 100m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.15 W | |
| Maximum Collector-Base Voltage |Vcb| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 12 V | |
| Maximum Collector Current |Ic max| | 0.4 A | |
| Max. Operating Junction Temperature (Tj) | 75 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 313295 | |