2SB367

SKU: 2SB367

2SB367 Transistor Germanium PNP CASE: SOT9 MAKE: Hitachi

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

2SB367 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB367H
Type	Transistor Germanium PNP
Case	SOT9
Manufacturer	Hitachi
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	4.0
Max. hFE	170
Min hFE	45
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
R(sat) (Û)	240m-
Derate Above 25°C	66m
Trans. Freq (Hz) Min.	500k
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343629

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