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2SB368
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2SB368

SKU: 2SB368
2SB368 Transistor Germanium PNP CASE: SOT9 MAKE: Hitachi
Datasheet
2SB368 Datasheet
Product specifications
Type Transistor Germanium PNP
Case SOT9
Manufacturer Hitachi
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 4.0
Max. hFE 170
Min hFE 45
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 240m-
Derate Above 25°C 66m
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 85
SKU 86487
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