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2SB376
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2SB376

SKU: 2SB376
2SB376 Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 20
Max. PD (W) 225m
Derate (Amb) (W/°C) 4.5m
hfe 50
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) .50i
Oper. Temp (°C) Max. 75
@Ic (A) 300m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 767232
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