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2SB386
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2SB386

SKU: 2SB386
2SB386 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Mitsubishi
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.5m
hfe 80
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) .50
Oper. Temp (°C) Max. 100
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 24 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 767228
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