2SB410AF

SKU: 2SB410AF

2SB410AF Transistor Germanium PNP CASE: TO3 MAKE: Sanyo Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Sanyo Semiconductor
Vbr CBO	55
Max. PD (W)	40
Max. hFE	275
Min hFE	27-
Ic Max. (A)	15
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	250u
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	85
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	135 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	11 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	27
SKU	572306

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