2SB413
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2SB413

SKU: 2SB413
2SB413 Transistor Germanium PNP CASE: TO107 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO107
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 12
Max. hFE 150
Min hFE 30
Ic Max. (A) 1.5
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Derate Above 25°C 208m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 13 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SKU 767227
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