2SB414

SKU: 2SB414

2SB414 Transistor Germanium PNP CASE: TO107 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO107
Manufacturer	Toshiba
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	12
Max. hFE	150
Min hFE	30
Ic Max. (A)	1.5
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Derate Above 25°C	208m
Trans. Freq (Hz) Min.	2.0M
Oper. Temp (°C) Max.	100
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	13 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	33
SKU	767226

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