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2SB421
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2SB421

SKU: 2SB421
2SB421 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 300m
C(ob) (F) 50p
Derate (Amb) (W/°C) 5.0m
hfe 70
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 2.5M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 35
SKU 767225
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