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2SB426A
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2SB426A

SKU: 2SB426A
2SB426A Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SB426
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 30
Max. hFE 80
Min hFE 34
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 160u
Polarity PNP
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 400k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.18 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 585126
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