2SB430

SKU: 2SB430

2SB430 Transistor Germanium PNP CASE: TO36 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO36
Manufacturer	Matsushita Electronics
Vbr CBO	70
Max. PD (W)	80
Min hFE	10
Ic Max. (A)	20
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	20m
Polarity	PNP
Derate Above 25°C	1.3
Trans. Freq (Hz) Min.	10k
Oper. Temp (°C) Max.	100#
@VCE (V)	0i
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	549783

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