2SB434O

SKU: 2SB434O

2SB434O Transistor Silicon PNP CASE: TO220 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Toshiba
Vbr CBO	50
Vbr CEO	50
Max. PD (W)	1.5
Max. hFE	140
Min hFE	70
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	767216

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