2SB435

SKU: 2SB435

2SB435 Transistor Silicon PNP CASE: TO220 MAKE: Microsemi Corporation

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£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

2SB435 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Microsemi Corporation
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	1.5
Derate (Amb) (W/°C)	200m
Max. hFE	240
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
R(sat) (Û)	1.0
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	84491

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