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2SB435O
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2SB435O

SKU: 2SB435O
2SB435O Transistor Silicon PNP CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 1.5
Max. hFE 140
Min hFE 70
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 767205
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