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2SB435R
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2SB435R

SKU: 2SB435R
2SB435R Transistor Silicon PNP CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 1.5
Max. hFE 80
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 767203
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