The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB439

2SB439

SKU: 2SB439
2SB439 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 10 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 150m
C(ob) (F) 30p
Derate (Amb) (W/°C) 3.0m
hfe 130
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. 2.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 394867
Back