2SB444
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2SB444

SKU: 2SB444
2SB444 Transistor Germanium PNP CASE: TO1 MAKE: Hitachi
Product specifications
Equivalent 2SB444B
Type Transistor Germanium PNP
Case TO1
Manufacturer Hitachi
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 100m
Derate (Amb) (W/°C) 1.7m
hfe 160
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 7.0u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 767199
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