2SB458

SKU: 2SB458

2SB458 Transistor Germanium PNP CASE: SOT9 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Equivalent	2SB458B
Type	Transistor Germanium PNP
Case	SOT9
Manufacturer	Mitsubishi
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	800m
Derate (Amb) (W/°C)	13m
hfe	28
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
@VCE (test) (V)	1.5
Oper. Temp (°C) Max.	100
@Ic (A)	500m
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	28
SKU	551991

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