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2SB462
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2SB462

SKU: 2SB462
2SB462 Transistor Germanium PNP CASE: TO66 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO66
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 6.0
Max. hFE 250
Min hFE 30
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 70u
Polarity PNP
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 900k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 584656
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