2SB464

SKU: 2SB464

2SB464 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	30
Max. hFE	170
Min hFE	30
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	330u
Polarity	PNP
R(sat) (Û)	60m
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	1.6M
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.7 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584657

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