2SB470

SKU: 2SB470

2SB470 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Fujitsu
Vbr CBO	25
Vbr CEO	18
Max. PD (W)	80m
Derate (Amb) (W/°C)	1.2m
hfe	160
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	PNP
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.08 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	540081

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