2SB476

SKU: 2SB476

2SB476 Transistor Germanium PNP CASE: TO5 MAKE: Matsushita Electronics

Datasheet

2SB476 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	10
Max. PD (W)	250m
Derate (Amb) (W/°C)	3.8m
hfe	75
Ic Max. (A)	2
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
Trans. Freq (Hz) Min.	1.2M
@VCE (test) (V)	0i
Oper. Temp (°C) Max.	100
@Ic (A)	2
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.6 MHz
Forward Current Transfer Ratio (hFE), MIN	75
SKU	343631

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