2SB476S

SKU: 2SB476S

2SB476S Transistor Germanium PNP CASE: TO39 MAKE: Matsushita Electronics

Datasheet

2SB476S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO39
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	10
Max. PD (W)	250m
Derate (Amb) (W/°C)	3.8m
hfe	80
Ic Max. (A)	2.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
Trans. Freq (Hz) Min.	1.2M
@VCE (test) (V)	0i
Oper. Temp (°C) Max.	100
@Ic (A)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	343632

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