2SB479
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2SB479

SKU: 2SB479
2SB479 Transistor Germanium PNP CASE: TO36 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO36
Manufacturer Mitsubishi
Vbr CBO 80
Vbr CEO 40
Max. PD (W) 80
Max. hFE 130
Min hFE 20
Ic Max. (A) 30
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
R(sat) (Û) 80m
Derate Above 25°C 1.3
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 551994
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