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2SB495A
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2SB495A

SKU: 2SB495A
2SB495A Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 32
Vbr CEO 25
Max. PD (W) 200m
Derate (Amb) (W/°C) 3.3m
hfe 110
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 110
SKU 550412
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