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2SB496
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2SB496

SKU: 2SB496
2SB496 Transistor Germanium PNP CASE: TO1 MAKE: Hitachi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Hitachi
Vbr CBO 25
Vbr CEO 18
Max. PD (W) 600m
Derate (Amb) (W/°C) 10m
hfe 60
Ic Max. (A) 250m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. 2.0M
@VCE (test) (V) 1.5
Oper. Temp (°C) Max. 100
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.25 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542449
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