2SB502A

SKU: 2SB502A

2SB502A Transistor Silicon PNP CASE: TO66 MAKE: Generic

Datasheet

2SB502A Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon PNP
Case	TO66
Manufacturer	TOSHIBA
Vbr CBO	110
Vbr CEO	80
Max. PD (W)	25
Derate (Amb) (W/°C)	200m
Max. hFE	280
Min hFE	30
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Tr Max. (s)	1.5u
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	350 pF
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	343635

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