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2SB503A
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2SB503A

SKU: 2SB503A
2SB503A Transistor Silicon PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer TOSHIBA
Vbr CBO 80
Vbr CEO 50
Max. PD (W) 25
Derate (Amb) (W/°C) 200m
Max. hFE 280
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 1.5u
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 350 pF
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 767174
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