The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB508D
View detailed images (12)

2SB508D

SKU: 2SB508D
2SB508D Transistor Silicon PNP CASE: TO220 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
Max. hFE 120
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 8.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 767166
Back